Switching power supply device, semiconductor integrated circuit device and power supply device

ABSTRACT

There are provided a switching power supply device performing a stable operation with fast response, a semiconductor integrated circuit device, and a power supply device. 
     A capacitor is provided between the output side of an inductor and a ground potential. A first power MOSFET supplies an electric current from an input voltage to the input side of the inductor. A second power MOSFET turned on when the first power MOSFET is off allows the input side of the inductor to be of a predetermined potential. A first feedback signal corresponding to an output voltage obtained from the output side of the inductor and a second feedback signal corresponding to an electric current flowed to the first power MOSFET are used to form a PWM signal. The first power MOSFET has plural cells of a vertical type MOS-construction. The number of cells is 1/N. A detection MOSFET in which the gains and the drains are shared over the same semiconductor substrate with the first power MOSFET is provided to form a second feedback signal.

CROSS-REFERENCE TO RELATED APPLICATION

The present application claims priority from Japanese patent applicationNo. 2006-231129 filed on Aug. 28, 2006, No. 2005-323832 filed on Nov. 8,2005 and No. 2006-5512, filed on Jan. 13, 2006, the contents of whichare hereby incorporated by reference into this application.

BACKGROUND OF THE INVENTION

The present invention relates to a switching power supply device, asemiconductor integrated circuit device, and a power supply device. Forinstance, the present invention relates to a technique effective to beapplied to a switching power supply device converting a high voltage toa low voltage and a semiconductor integrated circuit device usedtherefor.

There is U.S. Pat. No. 6,559,684 as a switching power supply device.There is “Fundamentals of Power Electronics Second Edition”, pp.439-449, published by KLUWER ACADEMIC PUBLISHERS in the United States,as a technical document related to a switching power supply device.

-   [Patent Document 1] U.S. Pat. No. 6,559,684-   [Non-Patent Document 1] “Fundamentals of Power Electronics Second    Edition”, pp. 439-449, published by KLUWER ACADEMIC PUBLISHERS

SUMMARY OF THE INVENTION

The operating frequency of a recent PC (personal computer) and a systemcontrol unit (memory, CPU, and GPU) mounted on a server is being fasteryear by year for increasing processing capacity. A supply voltagethereof is being lowered. Both electric current consumption increased byhigh-frequency operation and a leak current caused due to loweredvoltage tend to increase. A power supply circuit is required to provideincreased accuracy of a supply voltage, fast response for preventinglowered supply voltage at sudden change in load, and stabile operation.The design of the power supply circuit becomes very difficult in orderto meet these requirements.

FIG. 10 shows the schematic construction of a voltage drop typeswitching power supply device of a power supply control system which hasbeen studied prior to this invention. FIG. 11 shows an operatingwaveform diagram thereof. In the voltage control system, there is onefeedback loop FB since only output voltage Vout is monitored viafeedback circuit CPS. The circuit design is easy. Since error amplifierEA compares RAMP waveforms at high amplitude level, a satisfactory noisemargin can be obtained. It is difficult to stabilize the feedback loopsystem. Fast response is impossible since the loop gain need be dropped.

FIG. 12 shows a schematic block diagram of a peak current control systemwhich has been studied prior to this invention. FIG. 13 shows anoperating waveform diagram thereof. In the peak current control system,output voltage Vout and input current IL/N are monitored and there aretwo feedback loops FB1 and FB2. The instable element of the feedbackloop system can be cancelled. The phase compensation becomes easy. Theloop gain need not be dropped excessively. The switching power supplydevice of the peak current control system is a circuit suitable for fastload response of a power supply. High accuracy current detection isnecessary for monitoring the input current. The circuit construction ofthe peak current control system is more complicated than that of thevoltage control system. Output current IL is detected from the switchnode of the power supply circuit. Unnecessary current information suchas spike noise need be cancelled.

FIG. 14 shows a block diagram of a switching power supply device of thepeak current control system which has been studied prior to thisinvention. MOSFETQS (hereinafter, called a sense MOSFET) having an areawhich is 1/N of that of high side power MOSFETQM. An electric currentwhich is 1/N times an electric current flowed to the main MOSFETQM isflowed to the sense MOSFETQS. For instance, when the ratio between themain MOSFETQM and the sense MOSFETQS is 5000:1, the sense current is 5mA when the main current is 25 A. This is sensed by end-to-end voltageVs of sense resistance Rs. In this case, in the Non-Patent Document, anoperational amplifier of the source input as shown in FIG. 15 is used sothat the source potential of the sense MOSFET and the source of the mainMOSFET are of the same potential, obtaining a high accuracy sensecurrent.

Negative feedback control is performed by the operational amplifier asshown in FIG. 15 so that the source potentials of the main MOSFETQM andthe sense MOSFETQS are equal in order to obtain the sense current, Forhigh accuracy current detection, an offset of the operational amplifierneed be minimum. Typically, to prevent manufacturing variation for fastoperation, a CMOS process is used for MOSFETQ1 and MOSFETQ2 indifferential parts. A high voltage (e.g., 0 to 16V) is applied betweenthe drain and the source of MOSFETQ3 connected to an OUT terminal. AnLD-MOSFET using a high voltage process is used for the MOSFETQ3. TheMOSFETQ3 using the high voltage process has Vth higher than that of theCMOS process and varies the voltage between the gate and the sourcedepending on a sense current value.

For the above offset, a systematic offset can be caused, as shown inFIG. 16. The operational amplifier has a low input impedance at thesource terminal. When no bias current is supplied from the sensecurrent, normal operation is impossible. The bias current causes afurther offset. For instance, the bias current of the operationalamplifier is 150 μA and the ratio between the main MOSFETQM and thesense MOSFETQS is 5000:1. When an electric current of 0 A is flowed tothe main MOSFETQM, 150 μA as the bias current to the amplifier hasalready been flowed to the sense MOSETQS. An electric current of 150μA×5000=750 mA is flowed to the main MOSFET. The amplifier can have anoffset of 750 mA in a steady state.

The detection current is displaced in the amplifier by about 1 A, asshown in the characteristic diagram of FIG. 17, due to the systematicoffset and the bias current offset. The amplifier cannot be used forpeak current control which is required to increase the accuracy of anoutput current. At light load such as no load, main current IL is flowedbackward to the power supply side and the sense current tends to beflowed backward. There is no supply source of the backflow current. Inthis period, the amplifier is inactive. Response at light load can bedelayed.

As described above, both electric current consumption increased byhigh-frequency operation and a leak current caused due to loweredvoltage tend to increase. A power supply circuit is required to provideincreased accuracy of a supply voltage, fast response for preventinglowered supply voltage at sudden change in load, and stabile operation.The design of the power supply circuit which meets these requirementsbecomes very difficult. Plural power supply devices have been studied tobe operated in parallel corresponding to a load current. Such powersupply device need to have a new function intended for paralleloperation.

An object of the present invention is to provide a switching powersupply device performing stable operation with fast response and asemiconductor integrated circuit device preferable therefor. Anotherobject of the present invention is to provide a power supply devicepreferable for parallel operation. A further object of the presentinvention is to provide a power supply device which can change andincrease the current supply capability. A still further object of thepresent invention is to provide a power supply device which increasesefficiency with fast response. The foregoing and other objects and novelfeatures of the present invention will be apparent from the descriptionof this specification and the accompanying drawings.

The overview of a representative invention disclosed in this applicationwill be briefly described as follows. A capacitor is provided betweenthe output side of an inductor formed with an output voltage and aground potential. A first power MOSFET supplies an electric current froman input voltage to the input side of the inductor. A second powerMOSFET turned on when the first power MOSFET is off allows the inputside of the inductor to be of a predetermined potential. A controlcircuit uses a first feedback signal corresponding to an output voltageobtained from the output side of the inductor and a second feedbacksignal corresponding to an electric current flowed to the first powerMOSFET to form a PWM signal. The first power MOSFET has plural cells ofa vertical type MOS construction. A detection MOSFET in which the numberof cells is 1/N of that of the first power MOSFET and the gate and thedrain or the source are shared with the first power MOSFET over the samesemiconductor substrate is provided to form the second feedback signal.

The overview of another representative invention disclosed in thisapplication will be briefly described as follows. A periodic signalcorresponding to an output signal of an oscillation circuit istransmitted to a pulse generation circuit via a first signaltransmission path and is transmitted to a first external terminal via asecond signal transmission path. A periodic signal inputted from thefirst external terminal is transmitted to the pulse generation circuitvia a third signal transmission path. A PWM period of the switchingpower supply circuit is set by a timing signal formed by the pulsegeneration circuit. There are provided a first mode transmitting theperiodic signal corresponding to the output signal of the oscillationcircuit via the first signal transmission path and the second signaltransmission path and a second mode transmitting the periodic signalinputted from the first external terminal via the third signaltransmission path.

The overview of a further representative invention disclosed in thisapplication will be briefly described as follows. A periodic signalcorresponding to an output signal of an oscillation circuit istransmitted to a pulse generation circuit via a first signaltransmission path in a first mode and is transmitted to a first externalterminal via a second signal transmission path. The periodic signalinputted from the first external terminal is transmitted to the pulsegeneration circuit via a third signal transmission path in a secondmode. The first external terminals of the first power supply device andthe second power supply device to which a PWM period of the switchingpower supply circuit is set by a timing signal formed by the pulsegeneration circuit are connected. The first power supply device isoperated in the first mode. The second power supply device is operatedin the second mode.

The stable operation is possible with fast response of the switchingpower supply device.

Plural power supply devices can be easily operated in parallel. Theparallel operation can change and increase the current supplycapability. Noise reduction is easy. Fast response and increasedefficiency are possible.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an essential part schematic circuit diagram showing anembodiment of a switching power supply device according to thisinvention;

FIG. 2 is a circuit diagram showing an embodiment of a differentialamplification circuit of FIG. 1;

FIG. 3 is a characteristic diagram of an offset voltage and outputvoltage Vo to a sense current, of assistance in explaining the operationof the differential amplification circuit of FIG. 2;

FIG. 4 is an overall block diagram showing an embodiment of theswitching power supply device according to this invention;

FIG. 5 is an overall block diagram showing another embodiment of theswitching power supply device according to this invention;

FIG. 6 is a waveform diagram of assistance in explaining the operationof a slope compensation circuit of FIGS. 4 and 5;

FIG. 7 is another waveform diagram of assistance in explaining theoperation of the slope compensation circuit of FIGS. 4 and 5;

FIG. 8 is a block diagram showing an embodiment of a semiconductorintegrated circuit device used for the switching power supply deviceaccording to this invention;

FIG. 9 is a device section block diagram showing an embodiment of avertical type power MOSFET used in this invention;

FIG. 10 is a schematic block diagram of a voltage drop type switchingpower supply device of a voltage control system which has been studiedprior to this invention;

FIG. 11 is an operating waveform diagram of the switching power supplydevice of FIG. 10;

FIG. 12 is, a schematic block diagram of a switching power supply deviceof a peak current control system which has been studied prior to thisinvention;

FIG. 13 is an operating waveform diagram of the switching power supplydevice of FIG. 12;

FIG. 14 is a block diagram of a switching power supply device of a peakcurrent control system which has been studied prior to this invention;

FIG. 15 is a circuit diagram showing an embodiment of an operationalamplifier of FIG. 15;

FIG. 16 is a characteristic diagram of an offset voltage and outputvoltage Vo to a sense current, of assistance in explaining the operationof the operational amplifier of FIG. 15;

FIG. 17 is a characteristic diagram of a sense current and an outputvoltage to a main current when using an operational amplifier of FIG.15;

FIG. 18 is a block diagram showing an embodiment of oscillation circuitOSC and pulse generation circuit PG used for the switching power supplydevice according to this invention;

FIG. 19 is a waveform diagram of assistance in explaining the operationof the oscillation circuit OSC and the pulse generation circuit PG ofFIG. 1;

FIG. 20 is a partial schematic circuit diagram showing an embodiment ofthe switching power supply device according to this invention;

FIG. 21 is an essential part circuit diagram of assistance in explainingthe operation of the switching power supply device FIG. 20;

FIG. 22 is an operation explanatory diagram of FIG. 21;

FIG. 23 is an overall schematic circuit diagram showing an embodiment ofthe switching power supply device according to this invention;

FIG. 24 is a waveform diagram of assistance in explaining the operationof the switch power supply device of FIG. 23;

FIG. 25 is an essential part schematic circuit diagram showing anembodiment of the switching power supply device FIG. 23;

FIG. 26 is an overall block diagram showing an embodiment of theswitching power supply device according to this invention;

FIG. 27 is a block diagram showing an embodiment of the semiconductorintegrated circuit device used for the switching power supply deviceaccording to this invention;

FIG. 28 is a block diagram showing an embodiment of a power supplydevice according to this invention;

FIG. 29 is a block diagram showing another embodiment of the powersupply device according to this invention; and

FIG. 30 is an operating waveform diagram of the power supply device ofFIG. 29.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIG. 1 shows an essential part schematic circuit diagram of anembodiment of a switching power supply device according to thisinvention. This embodiment is intended for a voltage drop type switchingpower supply device which forms output voltage Vout obtained by droppinginput voltage Vin. Without being particularly limited, the input voltageVin is a relatively high voltage of e.g., 7 to 16V, and the outputvoltage Vout is a low voltage of about 1.2V. The drawing shows anexample in which the input voltage Vin is 12V.

The input voltage Vin supplies electric current IL from the input sideof inductor L via high potential side switch MOSFETGH. Capacitor C isprovided between the output side of the inductor L and circuit groundpotential GND. Such capacitor C smoothens the input voltage Vin to formthe output voltage Vout. The output voltage Vout is an operating voltageof load circuit RL such as a microprocessor CPU. Switch MOSFETGL isprovided between the input side of the inductor L and the circuit groundpotential GND. The MOSFETGL is turned on when the high potential sideswitch MOSFETGH is off to allow midpoint voltage VSWH to be of thecircuit ground potential, clamping a counter electromotive voltagecaused in the inductor L. Without being particularly limited, the switchMOSFETGH and MOSFETGL are constructed by vertical type power MOSFETs ofN channel type. As described above, the junction of the switch MOSFETGHand MOSFETGL is connected to the input side of the inductor L.

In this embodiment, the high potential side switch MOSFETGH has MOSFETQMand MOSFETQS. The MOSFETQM and MOSFETQS are formed over onesemiconductor chip CP1. The MOSFETQM is a main MOSFET forming theelectric current IL as the high potential side switch MOSFETGH. TheMOSFETQS is a sense MOSFET monitoring the electric current IL flowed tothe MOSFETQM. As described later, these are vertical type MOSFETs formedover one semiconductor substrate. These are formed to have an area ratioof N:1 (e.g., 5000:1). The MOSFETQS flows an electric current of IL/N(IL/5000). The low potential side switch MOSFETGL is formed by onesemiconductor chip CP2.

The drains and the gates of the MOSFETQM and MOSFETQS are integrallyformed over the semiconductor substrate and have the same voltage. TheMOSFETQM and MOSFETQS are operated as source follower output MOSFETs. Toobtain the electric current IL/N corresponding to the area ratio, thesource potentials of both the MOSFETQM and the MOSFETQS need be equal.The source potentials of both the MOSFETQM and the MOSFETQS are suppliedto the positive phase input (+) and the negative phase input (−) ofdifferential amplification circuit AMP, respectively. Output voltage Voof the differential amplification circuit AMP is supplied to the gate ofP channel MOSFETQ3. The source of the MOSFETQ3 is connected to thesource of the MOSFETQS. Without being particularly limited, the drain ofthe MOSFETQ3 is provided with diode D and resistance Rs. The resistanceRs forms a voltage signal corresponding to the sense current IL/N of theMOSFETQS which is one feedback loop signal for forming a PWM signal.

Without being particularly limited, in this embodiment, the source sideand the drain side of the MOSFETQ3 are provided with bias currentsources Ib1 and Ib2. The bias current sources Ib1 and Ib2 are notparticularly limited and are constructed by current mirror MOSFETsoperated by a shared current to flow the same bias current. The MOSFETQ3is provided with such bias current sources Ib1 and Ib2. Even at no loadin which the sense current is almost zero, the drain voltages of themain MOSFETQM and the sense MOSFETQS are normally equal to flow thesense current at high accuracy. While maintaining such state, an offsetcaused due to the flow of the bias current flowed to the MOSFETQ3 intothe resistance Rs can be prevented.

Although being omitted in the drawing, the peak current control systemusing two feedback loops FB1 and FB2 as shown in FIG. 12 is applied. APWM generation circuit of such peak current control system forms the PWMsignal controlling the output voltage Vout to a voltage of about 1.2V.The resistance Rs forms the PWM signal by a comparison signal of thepeak value (FB2) of the voltage IL/N corresponding to the sense currentas shown in FIG. 13 and voltage signal EO (FB1) obtained by dividing theoutput voltage Vout by a voltage divider circuit, not shown, inputtingthe divided voltage to compensation circuit CMS, and removing anyhigh-frequency component as an output of the compensation circuit CMS.The PWM signal is inputted to a control circuit. Such control circuitperforms switch control of the switch MOSFETGH and MOSFETGL via driverDV1 and DV2.

In this embodiment, N channel type power MOSFETGH (QM) of low ON-stateresistance and low Qgd is used as the high potential side switch deviceto be operated as a source follower output circuit. To obtain highvoltage BOOT in the midpoint potential corresponding to the inputvoltage Vin, in other words, to prevent loss due to the midpointpotential VSWH lowered by the threshold voltage of the MOSFETGH (QM), aboosting circuit is provided.

The boosting circuit operates to allow the gate voltage when theMOSFETGH is on to be a high voltage above the threshold voltage withrespect to the input voltage Vin. The midpoint is connected to one endof boot strap capacitance CB as shown. The other end of the boot strapcapacitance CB is connected to power terminal Vcc of 5V via a switchdevice such as Schottky diode SBD. When the low potential side switchMOSFETGL is on and the high potential side switch MOSFETGH is off, theboot strap capacitance CB is charged-up from the power terminal Vcc.When the MOSFETGL is turned off and the MOSFETGH (QM) is switched on,the gate voltage is boosted with respect to the source side potential ofthe MOSFETGH by the charge-up voltage (Vin+Vcc) of the boot strapcapacitance CB. In this example, voltage loss by the Schottky diode SBDis neglected. The boosted voltage BOOT is used as an operating voltageof the driver DV1, the bias current source Ib1, and the differentialamplification circuit AMP.

FIG. 2 shows a circuit diagram of an embodiment of the differentialamplification circuit of FIG. 1. P channel MOSFETQ1 and MOSFETQ2 areconnected in a differential form. Bias current source Ib3 is providedbetween the sources of the MOSFETQ1 and the MOSFETQ2 and the boostedvoltage BOOT. The gate of the MOSFETQ1 is connected to the positivephase input terminal (+). The gate of the MOSFETQ2 is connected to thenegative phase input terminal (−). N channel MOSFETQ7 and MOSFETQ8 in acurrent mirror form are provided as load circuits in the drains of theMOSFETQ1 and the MOSFETQ2. The gate and the drain of the MOSFETQ7 areconnected in a diode form. The gate and the drain of the MOSFETQ7 areconnected to the drain of the MOSFETQ1. The gate and the source of theMOSFETQ8 are sharably connected to the gate and the source of theMOSFETQ7 in the current mirror form. The drain of the MOSFETQ8 and thedrain of the MOSFETQ2 are connected to output terminal OUT to form theoutput voltage Vo.

In this embodiment, the output voltage Vo is connected to the gate of Nchannel MOSFETQ4. Without being particularly limited, the boostedvoltage BOOT is supplied to the drain of the MOSFETQ4. The source of theMOSFETQ4 is connected to the source of P channel MOSFETQ5. The drain andthe gate of the MOSFETQ5 are sharably connected in a diode form. Biascurrent source Ib4 is provided between the drain and the gate of theMOSFETQ5 and ground potential VSS. P channel MOSFETQ6 connected in asource follower form is provided between the sharably connected sourcesof the MOSFETQ7 and the MOSFETQ8 and the circuit ground potential VSS.

The MOSFETQ1, MOSFETQ2, MOSFETQ7, and MOSFETQ8 construct thedifferential amplification circuit of a general gate input. TheMOSFETQ4, MOSFETQ5, and MOSFETQ6 construct a systematic offset cancelcircuit. When the gate voltage of the MOSFETQ5 is Va and the drainvoltage of the MOSFETQ7 is Vb, the following equation is established.Va=Vout−Vgs4−Vgs5  (1)Vb=Va+Vgs7+Vgs6  (2)

When Ib4=Ib3/2, Vgs4=Vgs7 and Vgs5=Vgs6. Vo=Vb by the above equations(1) and (2). The Vgs4 to Vgs7 are the gate and source voltages of theMOSFETQ4 to MOSFETQ7.

The output voltage Vo of the differential amplification circuit isconnected to the gate of MOSFETQ13, as shown in FIG. 1. The positivephase input (+) and the negative phase input (−) of the differentialamplification circuit AMP are connected to the sources of the mainMOSFETQ10 and the sense MOSFETQ11. The drain voltages of thedifferential MOSFETQ1 and MOSFETQ2 in the differential amplificationcircuit AMP are equal like Vo=Vb. This means that the positive phaseinput (+) and the negative phase input (−) are equal so that thecondition of Ib4=Ib3/2 is established. Increase and decrease in thesense current (IL/N) and Vth influence of the LD-MOSFETQ13 areeliminated. The systematic offset is cancelled. The offset voltage issmall like 5.3 μV (microvolt) at most and the accuracy of thedifferential amplification circuit AMP can be increased.

In this embodiment, the offset voltage can be smaller to 5.3 μV at mostso as to be neglected irrespective of increase and decrease in the sensecurrent IL, as described above. The main current flowed to the mainMOSFETQ10 can produce the output voltage Vo of the differentialamplification circuit AMP from near zero ampere. Such output voltage Vois lowered so as to compensate for increase in gate and source voltageVgs of the MOSFETQ13 corresponding to increase in the main current IL.As described above, the source potentials of the main MOSFETQ10 and thesense MOSFETQ11 are equal to realize PWM control by the peak currentcontrol system at high accuracy.

As shown in FIG. 3, the offset voltage can be smaller to 5.3 μV at mostso as to be neglected irrespective of increase and decrease in the sensecurrent IL. The main current flowed to the main MOSFETQM can produceoutput voltage Vo of the differential amplification circuit AMP fromnear zero ampere. Such output voltage Vo is lowered so as to compensatefor increase in the threshold voltage Vgs of MOSFETQ3 corresponding toincrease in the main current IL. As described above, the sourcepotentials of the main MOSFETQM and the sense MOSFETQS are equal torealize PWM control by the peak current control system at high accuracy.

FIG. 4 shows an overall block diagram of an embodiment of the switchingpower supply device according to this invention. Without beingparticularly limited, the part surrounded by the dash-single-dot line inthe drawing indicates a semiconductor integrated circuit device of amulti-chip construction. Three semiconductor chips having two powerMOSFETs and a control circuit thereof as indicated by the dotted linesare mounted over one package. The high potential side switch MOSFETGHhas the MOSFETQ10 corresponding to the main MOSFETQM and the MOSFETQ11corresponding to the sense MOSFETQS. The area ratio (current ratio)between the MOSFETQ10 and MOSFETQ11 is set to 5000:1. The low potentialside switch MOSFETGL has MOSFETQ12. The source of the MOSFETQ12 isconnected to independent ground terminal PGND to reduce the influence ofswitching noise.

An input voltage of about 12V is supplied from terminal VIN. The voltageof the terminal VIN is connected to the drains of the MOSFETQ10 and theMOSFETQ11 and is connected to power supply circuit REG. The power supplycircuit REG receives the input voltage VIN of 12V to form an internalvoltage of about 5V. Terminal REG5 is connected to the stabilizingcapacitor. An internal voltage corresponding to the supply voltage Vccis formed. The internal voltage formed by the power supply circuit REGis an operating voltage of logic circuit LGC receiving the PWM signal toform a switch control signal of the high potential side switch MOSFETGHand the low potential side switch MOSFETGL, the driver DV2 forming adriving signal supplied to the gate of the low potential side switchMOSFETQ12, and an internal circuit such as transistor T1 of thelater-described slope compensation circuit.

The internal voltage formed by the power supply circuit REG is connectedto one end of the boot strap capacitance CB via the Schottky diode SBDand the terminal BOOT constructing the boosting circuit. The other endof the boot strap capacitance CB is connected to terminal SW. Theterminal SW is connected to the source of the MOSFETQ10 and the drain ofthe MOSFETQ12 and is connected to the input side of the inductor L. Thecapacitor C is provided between the other end of the inductor L and thecircuit ground potential. The output voltage Vout of 1.2V is formed tobe supplied to a load circuit, not shown.

The source of the MOSFETQ11 and the source of the MOSFETQ10 areconnected to input terminals (+) and (−) of the differentialamplification circuit AMP. The differential amplification circuit AMP isconstructed by a circuit as shown in FIG. 2. The source potentials ofthe MOSFETQ10 and the MOSFETQ11 are equal for operation to obtain a highaccuracy sense current. MOSFETQ3 to which the sense current formed bythe MOSFETQ11 is flowed has a high voltage device like the LD-MOSFET.The source side and the drain side of such MOSFETQ3 are provided withbias current source Ib corresponding to the bias current sources Ib1 andIb2 shown in FIG. 2. The drain of the MOSFETQ3 is connected to terminalCS via the diode D. The terminal CS is connected to the resistance Rsconverting a current signal to a voltage signal. A voltage signalproduced by the terminal CS is used as the signal of the feedback loopFB2.

In this embodiment, without being particularly limited, slopecompensation circuit SC is provided. The slope compensation circuit SCforms a current signal corresponding to a RAMP waveform to supply thecurrent signal to the resistance device converting it to a voltagesignal via terminal RAMP. The voltage signal produced by the terminalRAMP is supplied to the emitter of the transistor T1. The voltage signalcorresponding to sense current IL/5000 (=N) formed by the resistance Rswhich is level shifted by the diode D is supplied to the base of thetransistor T1. The voltage signal formed by the resistance Rs and thevoltage signal corresponding to the RAMP waveform of the slopecompensation circuit SC are added to the emitter of the transistor T1 tobe transmitted to voltage comparison circuit VC1.

The output voltage Vout is divided by the voltage divider circuit havingresistances R1 and R2 to be inputted to terminal FB. The divided voltageinputted to the terminal FB is inputted as the signal of the feedbackloop FB1 to error amplifier EA. The error amplifier EA takes out adifferential between the divided voltage and reference voltage Vref. Theoutput signal of the error amplifier EA whose noise component is removedby the compensation circuit having the resistance and capacitor providedat the terminal EO is transmitted to the voltage comparison circuit VC1.The resistance and capacitor provided at terminal TRK form a soft startsignal to transmit it to the error amplifier EA. The output voltage Voutimmediately after power-on is controlled to rise softly corresponding tothe soft start signal. Frequency setting of oscillation circuit OSC isperformed by the capacitor connected to terminal CT to set the frequencyof the PWM signal. The pulse formed by the oscillation circuit OSC isreset signal RES of flip-flop circuit FF forming the PWM signal.

In the peak current control system shown in FIG. 13, the reset signalRES formed by the oscillation circuit corresponds to reset pulse RP inthe drawing and the flip-flop circuit FF is reset to allow the PWMsignal obtained from invert output /Q to rise. This turns on the highpotential side switch MOSFETQ10. The sense current IL/N is detected byMOSFETQ11 to be a voltage signal. The divided voltage of the outputvoltage Vout is compared with the differential output EO by voltagecomparison circuit VC1. When the voltage corresponding to the IL/Nreaches the voltage EO, the flip-flop circuit FF is set to change thePWM signal to the low level. This turns off the high potential sideswitch MOSFETQ10 and MOSFETQ11. The low potential side MOSFETQ12 isswitched on.

MOSFETQ14 and MOSFETQ13 provided on the emitter side of the transistorT1 receive output signal Q of the flip-flop circuit FF to perform switchoperation and is operated to provide hysteresis characteristic to thevoltage comparison circuit VC1. As described above, when the flip-flopcircuit FF is set, the MOSFETQ14 and MOSFETQ15 are turned on toforcefully turn off the transistor T1. The input potential of thevoltage comparison circuit VC1 is lowered to maintain the set stateuntil the flip-flop circuit FF is reset by the reset signal RES.

The logic circuit LGC has a circuit setting dead time so that the highpotential side MOSFETQ10 and the low potential side MOSFETQ12 are notturned on at the same time, and a level shift circuit converting acontrol voltage transmitted to the high potential side MOSFETQ10 andMOSFETQ11 to a signal level corresponding to the boosted voltage.

As described above, as indicated by the dotted lines in the drawing, thehigh potential side switch MOSFETGH and the low potential side switchMOSFETGL are formed by one semiconductor chip. The oscillation circuitOSC, the error amplifier EA, the flip-flop circuit FF, the voltagecomparison circuit VC1, the transistor T1, and the slope compensationcircuit SC construct a PWM control circuit forming the PWM signal. Thelogic circuit LGC, the drivers DV1 and DV2, the power supply circuitREG, the differential amplification circuit AMP, and the MOSFETQ3construct a driver circuit and are formed by one semiconductor chip.

FIG. 5 shows an overall block diagram of another embodiment of theswitching power supply device according to this invention. In thisembodiment, a current limiter circuit using sense current IL/5000 formedby MOSFETQ11 is added to the embodiment of FIG. 4. The current limitercircuit is realized by using a terminal voltage of the externalresistance Rs. Reference voltage VR corresponding to the limiter currentand the voltage formed with the resistance Rs are detected by voltagecomparison circuit VC2 to bring the flip-flop circuit FF into the setstate via OR gate circuit G. The high potential side switch MOSFETQ10,MOSFETQ11, and MOSFETQ12 are turned off. The sense current producesnoise at switching. Blanking circuit BL of about several tens of ns isprovided for detecting the sense current for preventing malfunction.

In this embodiment, when the semiconductor integrated circuit devicesaccording to this invention are connected in parallel, the outputs ofthe error amplifiers EA are connected to be used for high accuracycurrent share. In the current share, the output of the error amplifierEA is connected to external terminal ISH via the diode (the base andemitter of transistor T2). For instance, the external terminals ISH oftwo switching power supply devices are interconnected. The externalterminals ISH are interconnected to share the output voltages of-theerror amplifiers EA of the two switching power supply devices to operateto form the similar output voltage Vout. Sharing is possible. The outputcurrent supply capability can be doubled,.

FIG. 6 shows a waveform diagram of assistance in explaining theoperation of the slope compensation circuit. The drawing showscomparison of the case of no slope compensation and the case of slopecomparison. The drawing shows a steady-state ripple current waveform bythe dotted line when duty D of a PWM signal is 60% and the input ofnoise like Δi by the solid line. As shown in the drawing, in the case ofno slope compensation, the noise current of the Δi displaces the ripplecurrent from the steady-state ripple current for oscillation operation.In the case of slope compensation, when noise current like Δi isinputted, the slope waveform is added to focus to the steady-stateripple current waveform. Voltage Veo in the drawing corresponds to thevoltage EO of FIG. 13.

FIG. 7 shows another waveform diagram of assistance in explaining theoperation of the slope compensation circuit. The drawing showscomparison of the case of no slope compensation and the case of slopecompensation like FIG. 6 by an example in which duty D of a PWM signalis 40%. Instable operation having dutyD below 50%, slope compensation isperformed to increase focusability as compared with the case of no slopecompensation. Such slope compensation is described in detail in theNon-Patent Document 1.

FIG. 8 shows a block diagram of an embodiment of a semiconductorintegrated circuit device used for the switching power supply deviceaccording to this invention. The drawing illustrates the pin arrangementand the inner construction corresponding to an actual semiconductorintegrated circuit device. In this embodiment, the semiconductorintegrated circuit device is a multi-chip module integrated circuit inwhich three semiconductor chips are mounted over one package. Thesemiconductor chip has the high potential side switch MOSFETGH, the lowpotential side switch MOSFETGL, and control circuit DRVC. The highpotential side switch MOSFETG is constructed by the main MOSFETQM (Q10)and the sense MOSFETQS (Q11). The low potential side switch MOSFETGL isconstructed by the MOSFETQ12. As indicated by the dotted line in FIG. 5,like the control circuit DRVC, the semiconductor integrated circuitdevice is constructed by a semiconductor chip having the drivers DV1 andDV2, the logic circuit LGC, the differential amplification circuit AMP,the MOSFETQ3, and the power supply circuit REG. When the switching powersupply device like FIG. 5 is constructed, the circuit of the controlpart forming the PWM signal of the control circuit is constructed in thesemiconductor integrated circuit device of a different chip externallyprovided.

The semiconductor integrated circuit device of this embodiment isprovided with 1 to 56 external terminals around the chip. The signal orvoltage as shown in the drawing is supplied to each of them.Alternatively, the external components are connected. The semiconductorintegrated circuit device is provided on its back surface side with theinput terminal VIN, the output terminal SW, and a tab pad like CGND. Allcontrol circuits of FIG. 4 or 5 may be incorporated into the controlcircuit DRVC.

Typically, when the sense MOS system as described above is employed,sense MOSFETQS and main MOSFETQM need be devices of the sameconstruction since a pair ratio thereof is important. The semiconductorintegrated circuit device need be a device of one chip construction inwhich power MOSFETs are incorporated into a control IC. The discreteconstruction in which the controller and the power MOSFETs are mountedover different chips cannot obtain the sense current. When the powerMOSFETs are incorporated into the control IC in one chip construction,the characteristic of the power MOSFETs is deteriorated moresignificantly than that of discrete power MOSFETs. It cannot be used forlarge current application to limit a current capacitance.

The vertical type construction MOSFETs like this embodiment are used todispose, in one semiconductor chip CP1, the main MOSFETQM on the highpotential side and the sense MOSFETQS having the same construction asthat of the main MOSFETQM and being 1/N times the main MOSFETQM. Thepair ratio variation in the threshold voltage Vgs and the ON-stateresistance of both the MOSFETQM and the MOSFETQS caused in themanufacturing process can be minimum. The ON-state resistance withtemperature rise is similarly increased or decreased in the mainMOSFETQM and the sense MOSFETQS. The sense current has less temperaturedependence. A high accuracy differential amplification circuit like FIG.2 is combined with the MOSFETQM and the MOSFETQS, detecting a highaccuracy sense current which can be used in peak current control.

FIG. 9 shows a device section block diagram of an embodiment of thevertical type power MOSFETQ10 to MOSFETQ12 used as the high potentialside switch MOSFET and the low potential side switch MOSFET. The drawingillustrates one MOSFET (cell). The drain N+ region is on the lower sideof a silicon substrate. The gate electrode covers the entire surface ofan N layer interposed between channels to release electric fieldconcentration below the gate. Electrons horizontally passes from thesource of N+ layer through the channels to reach the N layer. Thepositive voltage below the gate electrode allows the surface of the Nlayer to be an N+ stack layer. Electrons are flowed vertically to theentire surface of the N layer via such N+ stack layer to reach thedrain. The power MOSFET of this embodiment is called a vertical typeconstruction from the above electron flow.

The channels and the source of the N+ layer are formed in a ring stateso as to surround the N layer in the center part. The P layer formedwith the channels and the source (N+ layer) acts as the separationregion of the cell. The shapes of the source, the channels, and the Nlayer in the center part are hexagonal and plural cells are arranged ina honeycomb form. For instance, the MOSFETQ10 is formed by 20000 cells.The MOSFETQ11 is formed by four cells. The MOSFETQ10 and the MOSFETQ11have an area ratio (current ratio) of 5000:1. The drains of theMOSFETQ10 and the MOSFETQ11 are shared on the back surface of thesubstrate. The gates are sharably connected by a metal wiring layer onthe surface side. The sources of the 20000 cells are sharably connectedby the metal wiring layer on the surface illustrated in the drawing. Thefour cells are interconnected by the metal wiring layer. MOSFETGL hasthe similar construction in the absence of the sense MOSFET.

FIG. 18 shows a block diagram of an embodiment of the oscillationcircuit OSC and pulse generation circuit PG used in the switching powersupply circuit according to this invention. The oscillation circuit OSChas the capacitor C connected to the external terminal CT, constantcurrent sources I1 and I2, switch S1, and hysteresis comparator CP. Theconstant current source I1 flows a charged current from the supplyvoltage REG5 to the capacitor C. The on state of the switch S1 flows aconstant current larger than the constant current source I1 toward thecircuit ground potential. A differential current (I2-I1) discharges thecapacitor C. The hysteresis comparator CP has a first state in which thevoltage of the external terminal CT is transit from a first thresholdvoltage V1 to a second threshold voltage V2 lower than that, and asecond operation state in which the voltage of the external terminal CTis transit from the second threshold voltage V2 to the first thresholdvoltage V1. For instance, when the hysteresis comparator CP is in thefirst operation state, output signal CPout is brought to the low levelto turn off the switch S1. When the hysteresis comparator CP becomes inthe second operation state, the output signal CPout is brought to thehigh level to turn on the switch S1.

When the voltage of the capacitor C is low and the hysteresis comparatorCP is in the second operation state, the switch S1 is turned off. Thecapacitor C is charged by the constant current source I1. When thevoltage of the capacitor C reaches the first threshold voltage V1, theoutput signal CPout of the hysteresis comparator CP is changed from thelow level to the high level to be brought into the first operationstate. The switch S1 is turned on. The switch S1 is on to switch thecapacitor C to the discharge operation by the differential current. Whenthe voltage of the capacitor C reaches the second threshold voltage V2,the hysteresis comparator CP changes the output signal CPout to the lowlevel to be brought into the second operation state again. The switch S1is turned off. Such operation is repeated to change the potential of thecapacitor C in the range of the first threshold voltage V1 and thesecond threshold voltage V2.

Frequency f of the output signal CPout of the oscillation circuit OSC isdivided by a factor of 2 using the frequency divider circuit. Thefrequency divided output f/2 is inputted to the pulse generation circuitPG via the contact “a” side of switch S3. The frequency divided outputf/2 is outputted from external terminal SYNC via output buffer OB andthe contact “a” side of switch S2. The signal from the external terminalSYNC is inputted to the pulse generation circuit, PG via the contact “b”side of the switch S2, inverter circuits IN1 and IN2, the contact “a”side of switch S4, and the contact “b” side of the switch S3. The outputsignal of the inverter circuit IN1 is inputted to the pulse generationcircuit PG via the contact “b” side of the switch S4 and the contact “b”side of the switch S3 bypassing the inverter circuit IN2.

The switches S2 and S3 are controlled by control signal CT1. The switchS4 is controlled by control signal CT2. The control signals CT1 and CT2are formed by voltage judge circuit VD. The voltage judge circuit VDperforms a judge operation of whether the potential of the capacitor Cis higher than the first threshold voltage V1 or is lower than thesecond threshold voltage V2, or is within the range of the firstthreshold voltage and the second threshold voltage V2. For instance, inthe potential of the capacitor C, the output signals of inverter circuitIN3 having a first logic threshold voltage lower than the firstthreshold voltage V1 and inverter circuit IN4 having a second logicthreshold voltage higher than the second threshold voltage V2 aresupplied to logic circuit LO. A combination thereof forms the controlsignals CT1 and CT2.

When the potential of the capacitor C is lower than the judge voltageand is higher than the second logic threshold voltage, the controlsignal CT1 is brought to the low level to connect the switches S2 and S3to the contact “a” side. When the potential of the capacitor C is higherthan the first logic threshold voltage or is lower than the second logicthreshold voltage, the control signal CT1 is brought to the high levelto connect the switches S2 and S3 to the contact “b” side. When thepotential of the capacitor C is lower than the second logic thresholdvoltage, the control signal CT2 is brought to the low level to connectthe switch S4 to the contact “a” side. When the potential of thecapacitor C is higher than the first logic threshold voltage, thecontrol signal CT2 is brought to the high level to connect the switch S4to the contact “b” side.

The pulse generation circuit PG forms the reset signal RES and maximumduty signal MXD for forming the later-described PWM signal in responseto a pulse signal inputted via the frequency divided output f/2 or theexternal terminal SYNC of the oscillation circuit via the signaltransmission paths having the switches S2 to S4.

FIG. 19 shows a waveform diagram of assistance in explaining theoperation of the oscillation circuit OSC and the pulse generationcircuit PG of FIG. 18. 3V corresponds to the first threshold voltage V1.2V corresponds to the second threshold voltage V2. The electric currentof the constant current source I2 is twice the electric current of theconstant current source I1. The external terminal CT connected to thecapacitor C has a triangle wave charged/discharged by the electriccurrent corresponding to the constant current I1. The output signalCPout of the hysteresis comparator CP is brought to the low level incharge operation and is brought to the high level in dischargeoperation. The frequency F is F (Hz)=I1(A)/[2×C(F)]×1V. Here, C (F) is acapacitance value of the capacitor C. 1V is a potential differencebetween the first threshold voltage V1 and the second threshold voltageV2.

The output signal f/2 of the frequency divider circuit is a pulseobtained by frequency dividing the output signal CPout of theoscillation circuit OSC by a factor of 2. The pulse generation circuitgenerates the maximum duty signal MXD when the frequency divided outputf/2 rises from the low level to the high level and generates the resetpulse RES at timing delayed by time T (e.g., 50 ns).

FIG. 20 shows a partial schematic circuit diagram of an embodiment ofthe switching power supply circuit according to this invention. Thisembodiment is intended for a voltage drop type switching power supplycircuit which forms the output voltage Vout obtained by dropping theinput voltage Vin. Without being particularly limited, the input voltageVin is a relatively high voltage of about 12V and the output voltageVout is a low voltage of about 1.2V.

The input voltage Vin supplies an electric current from the input sideof the inductor L via the high potential side switch MOSFETQ10.Capacitor CO is provided between the output side the inductor L and thecircuit ground potential GND. The output voltage Vout smoothened by suchcapacitor CO is formed. The output voltage Vout is the operating voltageof the load circuit Load such as a microprocessor CPU. The switchMOSFETQ12 is provided between the input side of the inductor L and thecircuit ground potential VSS. The MOSFETQ12 is turned on when the switchMOSFETQ10 is off so that the input side of the inductor L is the circuitground potential to clamp a counter electromotive voltage produced inthe inductor L. The switches MOSFETQ10 and MOSFETQ12 are constructed byN channel type power MOSFETs. As described above, the junction of theswitch MOSFETQ10 and MOSFETQ12 is connected to the input side ofinductor L1.

The output voltage Vout is fed back as feedback signal VF to PWMgeneration circuit PWMC. The PWM generation circuit PWMC receives thefeedback signal VF to generate the PWM signal controlling the outputvoltage Vout to a voltage of about 1.2V for transmitting it to controlcircuit Log. The control circuit Log forms a high voltage signal and alow potential side signal corresponding to the PWM signal. Dead time sothat the MOSFETQ10 and MOSFETQ12 are not turned on at the same time isset to both the signals. The high potential side signal is transmittedto the gate of the high potential side switch MOSFETQ10 via the driverDV1 having a level shift (level conversion) function as described later.The low potential side signal is transmitted to the gate of the lowpotential side switch MOSFETQ12 via the driver DV2.

FIG. 21 shows an essential part circuit diagram of assistance inexplaining the operation of the switching power supply circuit of FIG.20. FIG. 22 shows an operating waveform diagram thereof. As shown inFIG. 21, the electric current I1 is supplied to the input side of theinductor L via the high potential side switch MOSFETQ10 switchcontrolled by the PWM signal (pulse width control signal). The outputcapacitor CO is provided between the output side of the inductor L andthe circuit ground potential to obtain the output voltage Vout. The lowpotential side switch MOSFETQ12 is provided between the inductor L andthe ground potential. The MOSFETQ12 voltage clamps the input side of theinductor L when the MOSFETQ10 is turned off to circuit ground potentialVSS to flow the electric current I2 corresponding to the electriccurrent IL supplied to the load via the inductor L. The MOSFETQ10 andMOSFETQ12 are turned on alternately. The midpoint voltage VSWH has awaveform reciprocated between 0V (VSS) and the input voltage Vin.Stabilizing of the output voltage Vout is achieved by adjusting the dutyof the PWM. In FIG. 22, the average current of the electric current ILflowed to the inductor L is equal to load current Iout.

FIG. 23 shows an overall schematic circuit diagram of an embodiment ofthe switching power supply circuit according to this invention. The PWMgeneration circuit PWMC of the switching power supply circuit of thisembodiment is of a peak current control system. In the peak currentcontrol system, in addition to the feedback loop feeding back the outputvoltage Vout, the feedback loop in which the input current IL/N ismonitored and fed back is provided. The instable element of the feedbackloop system is cancelled to facilitate phase compensation. The loop gainneed not be dropped excessively. The switching power supply circuit canbe a circuit suitable for fast load response of the power supply. ThePWM generation circuit PWMC of this embodiment generates the PWM signalfrom the invert signal /Q of the flip-flop circuit FF. The flip-flopcircuit FF is reset by the reset signal RES formed by the pulsegeneration circuit PG of FIG. 18. It is set by the output signal EO ofthe error amplifier EA receiving the feedback signal VF and thereference voltage Vref corresponding to the output voltage Vout and theoutput signal of the comparator receiving the signal CS formed bysensing an electric current flowed to the high potential side switchMOSFETQ10.

FIG. 24 shows a waveform diagram of assistance in explaining theoperation of the switching power supply circuit of FIG. 23. In suchpeak-to-peak current control system, reaching of the reset signal RESresets the flip-flop circuit FF so that the PWM signal is brought to thehigh level to turn on the high potential side switch MOSFETQ10. Anelectric current corresponding to the electric current I1 of theMOSFETQ10 is flowed to resistance R to form monitor voltage CS. Thecomparator inverts the flip-flop circuit FF when the monitor voltage CSreaches the output signal EO of the error amplifier EA, thereby changingthe PWM signal from the high level to the low level. The PWM signal isformed by the monitor voltage CS of the electric current correspondingto the output current I1 to realize a fast load response. When the PWMsignal is changed from the high level to the low level, the highpotential side MOSFETQ10 is turned off and the low potential sideMOSFETQ12 is switched on.

FIG. 25 shows an essential part schematic circuit diagram of anembodiment of the switching power supply circuit of FIG. 24. The inputvoltage Vin, the high potential side switch MOSFETQ10, the inductor L,the MOSFETQ12, and the drivers DV1 and DV2 are the same as those of FIG.23. Without being particularly limited, the switch MOSFETQ10 andMOSFETQ12 are constructed by the vertical type power MOSFETs of Nchannel type. As described above, the junction of the switch MOSFETQ10and MOSFETQ12 is connected to the input side of the inductor L. TheMOSFETQ10, MOSFETQ11, and MOSFETQ12 in the drawing correspond toMOSFETQM, MOSFETQS, and MOSFETGL of FIG. 1. The capacitor Co correspondsto the capacitor C of FIG. 1.

In this embodiment, the sense MOSFETQ11 is provided to the highpotential side switch MOSFETQ10. The MOSFETQ10 and the MOSFETQ11 areformed over one semiconductor chip CP1. The MOSFETQ10 forms the electriccurrent IL as the high potential side switch MOSFET. The MOSFETQ11 is asense MOSFET monitoring the electric current IL flowed to the MOSFETQ10.As described later, these are vertical type MOSFET formed over onesemiconductor substrate. The area ratio is e.g., N:1 (e.g., 5000:1). Anelectric current of IL/N (IL/5000) is flowed by the MOSFETQS. The lowpotential side switch MOSFETQ12 is formed by one semiconductor chip CP2.

The drains and the gates of the MOSFETQ10 and MOSFETQ11 are integrallyformed over the semiconductor substrate and have the same voltage. TheMOSFETQ10 and MOSFETQ11 are operated as source follower output MOSFETs.To obtain the electric current IL/N corresponding to the area ratio, thesource potentials of both the MOSFETQ10 and the MOSFETQ11 need be equal.The source potentials of both the MOSFETQ10 and the MOSFETQ11 aresupplied to the positive phase input (+) and the negative phase input(−) of the differential amplification circuit AMP, respectively. Theoutput voltage Vo of the differential amplification circuit AMP issupplied to the gate of the P channel MOSFETQ13. The source of theMOSFETQ13 is connected to the source of the MOSFETQ11. Without beingparticularly limited, the drain of the MOSFETQ13 is provided with thediode D and the resistance Rs. The resistance Rs forms a voltage signalcorresponding to the sense current IL/N of the MOSFETQ11. This voltageis one feedback signal CS for forming a PWM signal.

Without being particularly limited, in this embodiment, the source sideand the drain side of the MOSFETQ13 are provided with bias currentsources Ib1 and Ib2. The bias current sources Ib1 and Ib2 are notparticularly limited and are constructed by current mirror MOSFETsoperated by a shared current to flow the same bias current. TheMOSFETQ13 is provided with such bias current sources Ib1 and Ib2. Evenat no load in which the sense current is almost zero, the drain voltagesof the main MOSFETQ10 and the sense MOSFETQ11 are normally equal to flowthe sense current at high accuracy. While maintaining such state, anoffset caused due to the flow of the bias current flowed to theMOSFETQ13 into the resistance Rs can be prevented.

The voltage formed by the resistance Rs is used as the feedback signalCS of the peak current control system using two feedback loops VF and CSas shown in FIG. 23, as described above. The PWM generation circuit PWMCof the peak current control system shown in FIG. 23 forms the PWM signalcontrolling the output voltage Vout to a voltage of about 1.2V. Theresistance Rs forms the PWM signal by a comparison signal of the peakvalue of the voltage CS (IL/N) corresponding to the sense current asshown in FIG. 24 and the output signal EO of the error amplifier EAreceiving the divided voltage obtained by dividing the output voltageVout by the voltage divider circuit, not shown and the referencevoltage. The PWM signal performs switch control of the switch MOSFETQ10and MOSFETQ12.

In this embodiment, the N channel type power MOSFETQ10 of low ON-stateresistance and low Qgd is used as the high potential side switch deviceto be operated as a source follower output circuit. To obtain the highvoltage BOOT in the midpoint potential corresponding to the inputvoltage Vin, in other words, to prevent loss due to the midpointpotential VSWH lowered by the threshold voltage of the MOSFETQ10, aboosting circuit is provided.

The boosting circuit operates to allow the gate voltage when theMOSFETQ10 is on to be a high voltage above the threshold voltage withrespect to the input voltage Vin. The midpoint is connected to one endof the boot strap capacitance CB as shown. The other end of the bootstrap capacitance CB is connected to the power terminal Vcc of 5V (REG5)via a switch device such as the Schottky diode SBD. When the lowpotential side switch MOSFETQ12 is on and the high potential side switchMOSFETQ10 is off, the boot strap capacitance CB is charged-up from thepower terminal Vcc. When MOSFETQ12 is turned off and MOSFETQ10 isswitched on, the gate voltage is boosted with respect to the source sidepotential of MOSFETQ10 by the charge-up voltage (Vin+Vcc) of the bootstrap capacitance CB. In this example, voltage loss by the Schottkydiode SBD is neglected. The boosted voltage BOOT is used as an operatingvoltage of the driver DV1, the bias current source Ib1, and thedifferential amplification circuit AMP.

The circuit shown in FIG. 2 is used for the differential amplificationcircuit AMP of FIG. 25. The output voltage Vo of the differentialamplification circuit AMP is connected to the gate of the MOSFETQ13. Thepositive phase input (+) and the negative phase input (−) of thedifferential amplification circuit AMP are connected to the sources ofthe main MOSFETQ10 and the sense MOSFETQ11. The drain voltages of thedifferential MOSFETQ1 and MOSFETQ2 in the differential amplificationcircuit AMP are equal like Vo=Vb. This means that the positive phaseinput (+) and the negative phase output (−) are equal so that thecondition of Ib4=Ib3/2 is established. Increase and decrease in thesense current (IL/N) and Vth influence of the LD-MOSFETQ13 areeliminated. The systematic offset is cancelled. The offset voltage issmall like 5.3 μV (microvolt) at most and the accuracy of thedifferential amplification circuit AMP can be increased.

In this embodiment, the offset voltage can be smaller to 5.3 μV at mostso as to be neglected irrespective of increase and decrease in the sensecurrent IL, as described above. The main current flowed to the mainMOSFETQ10 can produce the output voltage Vo of the differentialamplification circuit AMP from near zero ampere. Such output voltage Vois lowered so as to compensate for increase in the gate and sourcevoltage Vgs of MOSFETQ13 corresponding to increase in the main currentIL. As described above, the source potentials of the main MOSFETQ10 andthe sense MOSFETQ11 are equal to realize PWM control by the peak currentcontrol system at high accuracy.

FIG. 26 shows an overall block diagram of an embodiment of the switchingpower supply device according to this invention. Without beingparticularly limited, the part surrounded by the thick dash-single-dotline in the drawing indicates a semiconductor integrated circuit deviceof a multi-chip construction. Four semiconductor chips having two powerMOSFETGH and MOSFETGL, the control circuit DVRC thereof, and others asindicated by the dotted line are mounted over one package. The highpotential side switch MOSFETGH has the main MOSFETQ10 and the senseMOSFETQ11. The area ratio (current ratio) between the MOSFETQ10 and theMOSFETQ11 is set to 5000:1. The low potential side switch MOSFETGL hasMOSFETQ12. The source of the MOSFETQ12 is connected to the independentexternal ground terminal PGND to reduce the influence of switchingnoise.

An input voltage of about 12V is supplied from the terminal VIN. Thevoltage of the terminal VIN is connected to the drains of the MOSFETQ10and the MOSFETQ11 and is supplied to the power supply circuit REG. Thepower supply circuit REG receives the input voltage VIN of 12V to forman internal voltage (REG5) of about 5V. The terminal REG5 is connectedto the stabilizing capacitor. The internal voltage (REG5) is anoperating voltage of the logic circuit LGC forming a switch controlsignal of the high potential side switch MOSFETQ10 and MOSFETQ11 and thelow potential side switch MOSFETQ12, the driver DV2 forming a drivingsignal supplied to the gate of the low potential side switch MOSFETQ12and, without being particularly limited, an internal circuit such as thetransistor T1 for slope compensation.

The internal voltage (REG5) is connected to one end of the boot strapcapacitance CB via the Schottky diode SBD and the terminal BOOTconstructing the boosting circuit. The other end of the boot strapcapacitance CB is connected to the terminal SW. The terminal SW isconnected to the source of the MOSFETQ10 and the drain of the MOSFETQ12and is connected to the input side of the inductor L. The capacitor COis provided between the other end of the inductor L and the circuitground potential. The output voltage Vout of 1.2V is formed to besupplied to a load circuit such as a CPU, not shown.

The source of the MOSFETQ11 and the source of the MOSFETQ10 areconnected to input terminals (+) and (−) of the differentialamplification circuit AMP. The differential amplification circuit AMP isconstructed by a circuit as shown in FIG. 2. The source potentials ofthe MOSFETQ10 and the MOSFETQ11 are equal for operation to obtain a highaccuracy sense current. The MOSFETQ13 to which the sense current formedby the MOSFETQ11 is flowed has the LD-MOSFET. The source side and thedrain side of such MOSFETQ13 are provided with the bias current sourceIb corresponding to the bias current sources Ib1 and Ib2 shown in FIG.25. The drain of the MOSFETQ13 is connected to the terminal CS via theblanking circuit BK and the diode D. The terminal CS is connected to theresistance Rs converting a current signal to a voltage signal.

A voltage signal produced by the terminal CS is used as the feedbacksignal CS. The reference voltage VR corresponding to the limiter currentand the voltage formed with the resistance Rs are detected by thevoltage comparison circuit VC2 to bring the flip-flop circuit FF intothe set state via the OR gate circuit G1. The PWM signal is at lowlevel. The high potential side switch MOSFETQ10 and MOSFETQ11 are turnedoff. The sense current produces noise at switching. The blanking circuitBK of about several tens of ns is provided for detecting the sensecurrent for preventing malfunction.

In this embodiment, without being particularly limited, the slopecompensation circuit SC is provided. The slope compensation circuit SCforms a current signal corresponding to a RAMP waveform to supply thecurrent signal to the resistance device converting it to a voltagesignal via the terminal RAMP. The voltage signal produced by theterminal RAMP is supplied to the emitter of the transistor T1. Thevoltage signal corresponding to sense current IL/5000 (=N) formed by theresistance Rs which is level shifted by the diode D is supplied to thebase of the transistor T1. The voltage signal formed by the resistanceRs and the voltage signal corresponding to the RAMP waveform of theslope compensation circuit SC are added to the emitter of the transistorT1 to be transmitted to the voltage comparison circuit VC1.

The output voltage Vout is divided by the voltage divider circuit havingthe resistances R1 and R2 to be inputted to the terminal FB. The dividedvoltage inputted to the terminal FB is inputted as the feedback signalVF to the error amplifier EA. The error amplifier EA takes out adifferential between the divided voltage and reference voltage Vref. Theoutput signal of the error amplifier EA whose noise component is removedby the compensation circuit having the resistance and capacitor providedat the terminal EO is transmitted to the voltage comparison circuit VC1.The resistance and capacitor provided at the terminal TRK form a softstart signal to transmit it to the error amplifier EA. The outputvoltage Vout immediately after power-on is controlled to rise softlycorresponding to the soft start signal. Frequency setting of theoscillation circuit OSC is performed by the capacitor connected to theterminal CT shown in FIG. 18 and the constant currents I1 and I2 to setthe frequency of the PWM signal. The pulse formed by the oscillationcircuit OSC is supplied to the pulse generation circuit PG to form thereset signal RES of the flip-flop circuit FF and the maximum duty signalMXD as a forceful set signal.

In the peak current control system, the reset signal RES formed by theoscillation circuit OSC resets the flip-flop circuit FF to start the PWMsignal obtained from the invert output /Q. This turns on the highpotential side switch MOSFETQ10. The sense current IL/N is detected bythe MOSFETQ11 to be a voltage signal. The divided voltage of the outputvoltage Vout formed by the error amplifier EA is compared with thedifferential output EO of the reference voltage Vref by the voltagecomparison circuit VC1. When the voltage corresponding to the IL/Nreaches the voltage EO, the flip-flop circuit FF is set to change thePWM signal to the low level. This turns off the high potential sideswitch MOSFETQ10 and MOSFETQ11. The low potential side MOSFETQ12 isswitched on.

The MOSFETQ14 and the MOSFETQ13 provided on the emitter side of thetransistor T1 receive the output signal Q of the flip-flop circuit FF toperform switch operation and is operated to provide hysteresischaracteristic to voltage comparison circuit VC1. As described above,when the flip-flop circuit FF is set, the MOSFETQ14 and MOSFETQ15 areturned on to forcefully turn off the transistor T1. The input potentialof the voltage comparison circuit VC1 is lowered to maintain the setstate until the flip-flop circuit FF is reset by the reset signal RES.

The logic circuit LGC has a circuit setting dead time so that the highpotential side MOSFETQ10 and the low potential side MOSFETQ12 are notturned on at the same time, and a level shift circuit converting acontrol voltage transmitted to the high potential side MOSFETQ10 andMOSFETQ11 to a signal level corresponding to the boosted voltage.

In this embodiment, when the switching power supply devices according tothis invention are connected in parallel, the outputs of the erroramplifiers EA are connected to be used for high accuracy current share.In the current share, the output of the error amplifier EA is connectedto the external terminal ISH via the diode (the base and emitter of thetransistor T2). For instance, the external terminals ISH of twoswitching power supply devices are interconnected. The externalterminals ISH are interconnected to share the output voltages of theerror amplifiers EA of the two switching power supply devices to operateto form the similar output voltage Vout. Sharing is possible. The outputcurrent supply capability can be doubled. As described later, whenplural switching power supply devices are operated in parallel, theelectric current IL flowed the individual switching power supply devicesare equally distributed, which is an important condition to preventthermal runaway due to the fact that the specified switching powersupply device bears a large electric current.

The noise current displaces the ripple current from the steady-stateripple current for oscillation operation. The slope compensation circuitis provided. When a noise current is inputted, the slope waveform isadded to focus to the steady-state ripple current waveform. Such slopecompensation is described in detail in the Non-Patent Document 1.

In this embodiment, without being particularly limited, the followingmonitoring circuit is provided. The signal path of the monitoringcircuit is omitted. The monitoring circuit has circuit VLCOC monitoringthat input voltage VIN is lowered below a predetermined voltage, andcircuit OCLC using the feedback signal CS to monitor overcurrent inwhich an output current is above a predetermined current. Thesedetection signals UVLO and OCL are inputted to the logic circuit LGC toturn off output MOSFETQ10 and MOSFETQ11 irrespective of the PWM signal.The signals UVLO and OCL and the operation control signals ON/OFF of theswitching power supply device are supplied to the OR gate circuit G2 andturn on the MOSFETQ15 to bring the terminal TRK to the low level. Thisstops an output of the error amplifier EA.

FIG. 27 shows a block diagram of an embodiment of the semiconductorintegrated circuit device used for the switching power supply deviceaccording to this invention. The drawing illustrates the pin arrangementand the inner construction corresponding to an actual semiconductorintegrated circuit device. In this embodiment, it is a multi-chip moduleintegrated circuit in which three semiconductor chips are mounted overone package. The semiconductor chip has the high potential side switchMOSFETQ10 and MOSFETQ11 (GH), the low potential side switch MOSFETQ12(GL), and the control circuit DRVC shown in FIG. 26. As indicated by thedotted line in FIG. 26, like the control circuit DRVC, the semiconductorintegrated circuit device is constructed by a semiconductor chip havingthe drivers DV1 and DV2, the logic circuit LGC, the differentialamplification circuit AMP, MOSFETQ13, and power supply circuit REG. Whenthe switching power supply device like FIG. 26 is constructed, thecircuit of the control part forming the PWM signal of the controlcircuit is constructed in the semiconductor integrated circuit device ofa different chip externally provided. Four semiconductor chips areconstructed as one module.

The semiconductor integrated circuit device of this embodiment isprovided with 1 to 56 external terminals around the chip. The signal orvoltage as shown in the drawing is supplied to each of them.Alternatively, the external components are connected. The semiconductorintegrated circuit device is provided on its back surface side with theinput terminal VIN, the output terminal SW, and a tab pad like the CGND.All control circuits of FIG. 26 may be incorporated into the controlcircuit DRVC to be mounted over one package.

Typically, when the sense MOS system as described above is employed, thesense MOSFETQ11 and the main MOSFETQ10 need be devices of the sameconstruction since a pair ratio thereof is important. The semiconductorintegrated circuit device need be a device of one chip construction inwhich power MOSFETs are incorporated into a control IC. The discreteconstruction in which the controller and the power MOSFETs are mountedover different chips cannot obtain the sense current. When the powerMOSFETs are incorporated into the control IC in one chip construction,the characteristic of the power MOSFETs is deteriorated moresignificantly than that of discrete power MOSFETs. It cannot be used forlarge current application to limit a current capacitance.

The vertical type construction MOSFETs like this embodiment are used todispose, in one semiconductor chip CP1, as shown in FIG. 25, the mainMOSFETQ10 on the high potential side and the sense MOSFETQ11 having thesame construction as that of the main MOSFETQ10 and being 1/N times themain MOSFETQ10. The pair ratio variation in the threshold voltage Vgsand the ON-state resistance of both the MOSFETQ10 and the MOSFETQ11caused in the manufacturing process can be minimum. The ON-stateresistance with temperature rise is similarly increased or decreased inthe main MOSFETQ10 and the sense MOSFETQ11. The sense current has lesstemperature dependence. A high accuracy differential amplificationcircuit like FIG. 2 is combined with the MOSFETQ10 and the MOSFETQ11,detecting a high accuracy sense current which can be used in peakcurrent control. The vertical type power MOSFETQ10 to MOSFETQ12 shown inthe device construction cross-sectional view of FIG. 9 are used.

FIG. 28 shows a block diagram of an embodiment of a power supply deviceaccording to this invention. In this embodiment, the terminals SYNC andISH of switching power supply devices SWREG 1 to SWREGn as shown in FIG.26 are interconnected. The terminal CT of the switching power supplydevice SWREG 1 is connected to the capacitor C. The operation of theoscillation circuit OSC and the voltage judge circuit VD as shown inFIG. 18 brings the synchronization terminal SYNC into the output mode inthe switching power supply device SWREG1 to output a pulse formed by theoscillation circuit OSC of the switching power supply device SWREG1.

The terminals CT of the switching power supply devices SWREG2 to SWREGnare given the circuit ground potentials VSS. The operation of theoscillation circuit OSC and the voltage judge circuit VD as shown inFIG. 18 brings the synchronization terminals SYNC of the switching powersupply devices SWREG2 to SWREGn into the input mode. The SWREG2 toSWREGn to which a pulse formed by the oscillation circuit OSC of theswitching power supply device SWREG1 is inputted perform synchronizationoperation with the switching power supply device SWREG1. The terminalsISH shown in FIG. 26 are interconnected. The switching power supplydevices SWREG1 to SWREGn are operated to distribute the same current. Aload current concentrates on a specific switching power supply device inparallel operation to break the output MOSFET, which can be prevented.

The power supply device of FIG. 28 permits synchronization operationsimply by connecting the synchronization terminals SYNC of the switchingpower supply devices SWREG1 to SWREGn. This can increase the currentsupply capability ton times. The above-described synchronizationoperation equalizes noise frequencies generated from the switching powersupply devices SWREG1 to SWREGn. Measures to reduce such noise can beperformed to a specific frequency.

FIG. 29 shows a block diagram of another embodiment of a power supplydevice according to this invention. In this embodiment, the terminalsSYNC and ISH of switching power supply devices SWREG 1 to SWREGn asshown in FIG. 26 are interconnected. The terminal CT of the switchingpower supply device SWREG 1 is connected to the capacitor C, asdescribed above. The operation of the oscillation circuit OSC and thevoltage judge circuit VD as shown in FIG. 18 brings the synchronizationterminal SYNC into the output mode in the switching power supply deviceSWREG1 to output a pulse formed by the oscillation circuit OSC of theswitching power supply device SWREG1.

The terminal CT of the switching power supply device SWREG2 is given thesupply voltage REG5. The operation of the oscillation circuit OSC andthe voltage judge circuit VD as shown in FIG. 18 brings thesynchronization terminal SYNC of the switching power supply deviceSWREG2 into the input mode. The switching power supply device SWREG2 towhich a pulse formed by the oscillation circuit OSC of the switchingpower supply device SWREG1 is inputted. The switching power supplydevice SWREG2 inverts the pulse to supply it to the pulse generationcircuit PG and performs synchronization operation in which the phase isshifted 180° with respect to the switching power supply device SWREG1.The clocks are 180° phase inverted to each other in the switching powersupply devices SWREG1 and SWREG2 for performing two-phase operation.

As shown in the waveform diagram shown in FIG. 30, such two-phaseoperation reduces the ripple currents of the load currents IL1 and IL2flowed to the switching power supply device SWREG1 and the inductors L1and L2 provided in the SWREG1. The ripple voltage of the output voltageVout and the ripple current of the output smoothening capacitor CO canbe smaller. The operating frequency in appearance of the power supplydevice is doubled and the response (response to the load current) of thepower supply can be increased. The operating frequency in appearance ofthe power supply device maintains the response. The operatingfrequencies of the switching power supply devices SWREG1 and SWREG2 canbe reduced to half. The switching loss in the individual switching powersupply devices SWREG1 and SWREG2 can be reduced to half. The efficiencyof the power supply device can be increased. The terminals ISH shown inFIG. 26 are interconnected. The switching power supply devices SWREG1and SWREG2 are operated so as to distribute the same current. Incombination with the embodiment of FIG. 28, plural switching powersupply devices may be two-phase operated.

In the power supply devices operated in parallel, the switching powersupply devices having a relatively small current supply capability aredesigned as general-purpose switching power supply devices. The numberof parallel operations of the general-purpose switching power supplydevices is determined corresponding to the load current of the systemover which the switching power supply devices are mounted. This canstandardize the switch power supply. Substantial mass production of thepower supply devices is possible.

The invention which has been made by the present inventors isspecifically described based on the embodiments. The present inventionis not limited to the embodiments and various modifications can be madein the scope without departing from its purport. For instance, the powerMOSFET may be a lateral type MOSFET. Such lateral MOSFET may be used tomount part of the control circuit over one semiconductor chip. The highpotential side switch MOSFETGH may be a P channel MOSFET. In that case,the main MOSFETQM and the sense MOSFETQS are P channel MOSFETs and areconstructed as vertical type MOSFETs. The gates and the sources areshared over the same semiconductor substrate.

The MOSFET which has the drain terminals of the main MOSFETQM and thesense MOSFETQS connected to the inputs of the differential amplificationcircuits AMP, respectively and receives the output voltage Vo of thedifferential amplification circuit AMP is of P channel type when thehigh potential side switch MOSFETGH is a P channel MOSFET. When theMOSFET is of N channel type, the output voltage Vo need be driven at ahigh voltage since the high potential side switch MOSFETGH is connectedto the input voltage Vin. The construction of the differentialamplification circuit AMP need be complicated. Alternatively, thedifferential amplification circuit AMP and the MOSFETQ3 need be formedover the semiconductor substrate having the high potential side switchMOSFETGH to increase a breakdown voltage.

In FIG. 18, the terminal CT constructing the oscillation circuit is usedto bring the synchronization terminal SYNC into the output mode or theinput mode, or the pulse phase in the input mode is brought into the inphase mode or the invert mode. Thus, the switching operation isperformed in three ways. With any available space of the externalterminals, a control terminal is provided to easily realize the equalfunction.

A quarter frequency divider circuit is provided in the output part ofthe oscillation circuit PSC to form four pulses whose phases are shifted90°. A function so that the pulses are outputted or inputted from/tofour synchronization terminals may be added. In this case, one switchingpower supply is master operated and three switching power supplies areslave operated. Then, pulses whose phases are shifted 90° with eachother are inputted from the three synchronization terminals to themaster side. The four switching power supplies can be operated inparallel by pulses whose phases are shifted 90° with each other. Theoperating frequency in appearance can be four times or switching losscan be reduced to one quarter.

The power MOSFET of the switching power supply may be a lateral typeMOSFET. Such lateral MOSFET is used so that part of the control circuitmay be mounted over one semiconductor chip. The high potential sideswitch MOSFETQ10 and MOSFETQ11 as the power MOSFETs may be P channelMOSFETs. They may be constructed as vertical type MOSFETs. The gates andthe sources are shared over the same semiconductor substrate.

This invention can be widely applied to a voltage drop switching powersupply device of an electric current sense system, a semiconductorintegrated circuit used therefor, and a power supply device permittingparallel operation.

1. A switching power supply device comprising: an inductor; a capacitorprovided between the output side of the inductor and a ground potential;a first power MOSFET supplying an electric current from an input voltageto the input side of the inductor; a second power MOSFET turned on whenthe first power MOSFET is off and allowing the input side of theinductor to be of a predetermined potential; and a control circuit whichuses a first feedback signal corresponding to an output voltage obtainedfrom the output side of the inductor and a second feedback signalcorresponding to an electric current flowed to the first power MOSFET toform a PWM signal and forms a control signal supplied to the gates ofthe first and second power MOSFETs so that the output voltage is apredetermined voltage, wherein the first power MOSFET has plural cellsof a vertical type MOS construction, and wherein a detection MOSFEThaving cells of the vertical type MOS construction in which the numberof cells is 1/N of that of the first power MOSFET and the gate and thedrain or the source are shared with the first power MOSFET over the samesemiconductor substrate is provided to form the second feedback signalbased on an electric current flowed to the detection MOSFET.
 2. Theswitching power supply device according to claim 1, wherein the gatesand the drains of the first power MOSFET and the detection MOSFET areshared over the same semiconductor substrate, wherein the controlcircuit further comprises: a differential amplification circuit; and afirst MOSFET having the source connected to the source of the detectionMOSFET and being of a conductive type opposite the detection MOSFET,wherein the source of the first power MOSFET and the source of thedetection MOSFET are inputted to the differential amplification circuit,wherein an output signal of the differential amplification circuit issupplied to the gate of the first MOSFET, wherein the source side andthe drain side of the first MOSFET are provided with a first and secondbias current sources supplying a bias current in addition to a detectioncurrent flowed to the detection MOSFET, and wherein the drain of thefirst MOSFET is provided with resistance means converting a sensecurrent to a voltage signal to form the second feedback signal.
 3. Theswitching power supply device according to claim 2, wherein thedifferential amplification circuit comprises: a first and seconddifferential MOSFETs of a first conductive type in which the gates areconnected to a first input and a second input, respectively; an inputside MOSFET and an output side MOSFET of a second conductive typeprovided in the drains of the first and second differential MOSFETs andconstructing a current mirror load circuit; a second MOSFET of a firstconductive type provided between the sources of the input and outputside MOSFETs and a first operating voltage terminal; a third MOSFET of asecond conductive type in which the gate is connected to the drain ofthe output side MOSFET connected to the output terminal; a fourth MOSFETof a first conductive type in a diode form in which the source isconnected to the source of the third MOSFET; a first current sourceprovided between the shared source of the first and second differentialMOSFETs and a second operating voltage terminal; and a second currentsource flowing a bias current to the third MOSFET and the fourth MOSFET,and wherein the second MOSFET and the fourth MOSFET are in a currentmirror form.
 4. The switching power supply device according to claim 3,wherein the first input receives an output from the source of the firstpower MOSFET, wherein the second input receives an output from thesource of the detection MOSFET, wherein the second feedback signal iscompared with a predetermined voltage and is used for forming anovercurrent detection signal, and wherein the overcurrent detectionsignal turns off the first power MOSFET and the second power MOSFET. 5.The switching power supply device according to claim 4, wherein thefirst MOSFET has a high voltage construction as compared with atransistor constructing the differential amplification circuit.
 6. Theswitching power supply device according to claim 5, wherein the firstpower MOSFET and the detection MOSFET are formed over a firstsemiconductor chip, wherein the second power MOSFET is formed over asecond semiconductor chip, wherein a control part receiving the PWMsignal to form a driving signal of the first power MOSFET and the secondpower MOSFET, and the differential amplification circuit, the firstMOSFET, and a control part forming the PWM signal are formed over athird semiconductor chip, and wherein the first to third semiconductorchips are mounted over one package.
 7. The switching power supply deviceaccording to claim 6, wherein the inductor, capacitor, and a resistancedevice forming a first feedback signal and a second feedback signal areconstructed by external components.
 8. The switching power supply deviceaccording to claim 7, wherein a slope compensation signal is added tothe second feedback signal.
 9. A semiconductor integrated circuit devicecomprising: a first power MOSFET supplying an electric current from aninput voltage to the input side of an inductor; a second power MOSFETturned on when the first switch device is off and allowing the inputside of the inductor to be of a predetermined potential; and a controlcircuit which receives a PWM signal formed by using a first feedbacksignal corresponding to an output voltage smoothened by a capacitorprovided on the output side of the inductor and a second feedback signalcorresponding to an electric current flowed to the first power MOSFETand forms a driving signal supplied to the gates of the first powerMOSFET and the second power MOSFET so that the output voltage is apredetermined voltage, wherein the first power MOSFET has plural cellsof a vertical type MOS construction, and wherein a detection MOSFEThaving cells of the vertical type MOS construction in which the numberof cells is 1/N of that of the first power MOSFET and the gate and thedrain or the source are shared with the first power MOSFET over the samesemiconductor substrate is provided to form the second feedback signalbased on an electric current flowed to the detection MOSFET.
 10. Thesemiconductor integrated circuit device according to claim 9, whereinthe gates and the drains of the first power MOSFET and the detectionMOSFET are shared over the same semiconductor substrate, wherein thecontrol circuit further comprises: a differential amplification circuit;and a first MOSFET having the source connected to the source of thedetection MOSFET and being of a conductive type opposite the detectionMOSFET, wherein the source of the first power MOSFET and the source ofthe detection MOSFET are inputted to the differential amplificationcircuit, wherein an output signal of the differential amplificationcircuit is supplied to the gate of the first MOSFET, and wherein thesource side and the drain side of the first MOSFET are provided with afirst and second bias current sources supplying a bias current inaddition to a detection current flowed to the detection MOSFET.
 11. Thesemiconductor integrated circuit device according to claim 10, whereinthe differential amplification circuit comprises: a first and seconddifferential MOSFETs of a first conductive type in which the gates areconnected to a first input and a second input; an input side MOSFET andan output side MOSFET of a second conductive type provided in the drainsof the first and second differential MOSFETs and constructing a currentmirror load circuit; a second MOSFET of a first conductive type providedbetween the sources of the input side and output side MOSFETs and afirst operating voltage terminal; a third MOSFET of a second conductivetype in which the gate is connected to the drain of the output sideMOSFET connected to the output terminal; a fourth MOSFET of a firstconductive type in a diode form in which the source is connected to thesource of the third MOSFET; a first current source provided between theshared source of the first and second differential MOSFETs and a secondoperating voltage terminal; and a second current source flowing a biascurrent to the third MOSFET and the fourth MOSFET, and wherein thesecond MOSFET and the fourth MOSFET are in a current mirror form. 12.The semiconductor integrated circuit device according to claim 11,wherein the first input receives an output from the source of the firstpower MOSFET, wherein the second input receives an output from thesource of the detection MOSFET, wherein the second feedback signal iscompared with a predetermined voltage and is used for forming anovercurrent detection signal, and wherein the overcurrent detectionsignal turns off the first power MOSFET and the second power MOSFET. 13.The semiconductor integrated circuit device according to claim 12,wherein the first power MOSFET and the detection MOSFET are formed overa first semiconductor chip, wherein the second power MOSFET is formedover a second semiconductor chip, wherein the control circuit is formedover a third semiconductor chip, and wherein the first to thirdsemiconductor chips are mounted over one package.